This paper presents a submicron suspended piezoresistive silicon-beam structure as a basic sensing element to replace the conventional piezoresistors, so to improve the detection sensitivity. The alternative element benefits from the increase of the induced stress, which is locally concentrated on the suspended submicron beam. This approach allows the enhancement of sensitivity without modifying the parameters in the mechanical design. A modified deep reactive- ion etching process is developed to create both the suspended silicon-beam and the main mechanical structure in a single etching sequence. With the new element, sensitivity up to 52.5 V/N is obtained, corresponding to a 120% improvement compared to an equivalent structure with conventional piezoresistors.
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机译：本文提出了一种亚微米悬浮的压阻硅束结构作为基本的传感元件，以代替传统的压阻器，从而提高了检测灵敏度。替代元件受益于感应应力的增加，该感应应力局部地集中在悬浮的亚微米束上。这种方法可以在不修改机械设计参数的情况下提高灵敏度。开发了一种改进的深反应离子刻蚀工艺，可以在单个刻蚀序列中同时形成悬浮的硅束和主要机械结构。使用新元件，可获得高达52.5 V / N的灵敏度，与采用传统压阻器的等效结构相比，提高了120％。
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